Energy-saving lamp program development

Energy-saving lamp program development

It is a high-voltage, high-speed power MOSFET and IGBT gate driver. It integrates a high-voltage half-bridge drive circuit and a pre-oscillator to form a multi-functional, safer power drive chip. As shown in Figure 2 is the block diagram of the chip, the pin CT has a protective shutdown function, and a low voltage signal can be used to stop the driver output. In addition, the width of the output pulse remains the same. Once VCC is powered on and exceeds the turn-on threshold, the driver can oscillate at a more stable frequency. At the same time, by reducing the peak value of di/dt of the gate drive, increasing the hysteresis voltage of the undervoltage lockout threshold to 1V, so that the circuit's anti-noise performance is greatly improved. The Latch-up and ESD performance of the chip is good.